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Muting Transistor (15V, 1A) 2SD1468S Features 1) Low saturation voltage, typically VCE(sat) = 0.08V at Ic / IB = 500mA / 500A. 2) Ideal for low voltage, high current drives. 3) High DC current gain and high current. Dimensions (Unit : mm) SPT 4.0 3.0 2.0 (15Min.) 3Min. 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 (1)Emitter (2)Collector (3)Base Taping specifications Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 30 15 5 1 0.3 150 -55 to +150 Unit V V V A W C C Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 15 5 - - - 120 50 - Typ. - - - - - 0.08 - 150 15 Max. - - - 0.5 0.5 0.4 390 - 30 Unit V V V A A V - MHz pF IC=50A IC=1mA IE=50A VCB=20V VEB=4V IC/IB=0.5mA/50mA VCE/IC=3V/0.1A VCE=5V , IE= -50mA , f=100MHz VCE=10V , IE=0A , f=1MHz Conditions Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SD1468S SPT QRS TP 5000 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.B 2SD1468S Electrical characteristics curves 50 Data Sheet 140A 120A COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 1000 Ta=25C 500 VCE=10V 200 100 50 20 10 5 2 1 10000 5000 DC CURRENT GAIN : hFE Ta=25C 40 100A 80A 2000 1000 500 200 100 50 20 10 VCE=3V VCE=1V 30 60A 20 40A 10 IB=0A 0 0 20A 200 400 600 Ta=25C 800 1000 0 0.2 0.4 0.6 0.8 1.0 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (mV) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 5000 2000 1000 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 10000 COLLECTOR CURRENT : IC (mA) IC/IB=50/1 20/1 10/1 500 200 100 50 20 10 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 IC=100mA IC=50mA IC=10mA IC=5mA TRANSITION FREQUENCY : fT (MHz) 10000 COLLECTOR SATURATION VOLTAGE : VCE(saT) (mV) Ta=25C 1000 Ta=25C Ta=25C VCE=5V 1000 500 200 100 50 20 10 5 2 1 0.5 1 2 5 10 20 50 100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 BASE CURRENT : IB(mA) EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Collector-emitter saturation voltage vs. base current Fig.6 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob(pF) 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 EMITTER INPUT CAPACITANCE : Cib(pF) 1000 Ta=25C IE=0A f=1MHz Ta=25C IC=0A f=1MHz ON RESISTANCE : Ron() 100 50 20 10 5 2 1 0.5 0.2 Ta=25C 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 50 100 0.1 10 20 50 100 200 500 1000 2000 5000 10000 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) BASE CURRENT : IB (mA) Fig.7 Collector output capacitance vs. collector-base voltage Fig.8 Emitter input capacitance vs. emitter-base voltage Fig.9 "ON" resistance vs. base current characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.B 2SD1468S Data Sheet R(1k) input Vi 1kHz 100mVrms IB X V output v0 Ron= v0 vi-v0 xRL Fig.10 "ON" resistance measurement circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.12 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. 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